Selective growth of ZnO nanostructure using a patterned ALD...

Details Selective growth of ZnO nanostructure using a patterned ALD... Selective growth of ZnO nanostructure using a patterned ALD...

2007-12-04

2007-12-04

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S096000, C117S940000

Reexamination Certificate

active

10977430

ABSTRACT:
Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as by etching, and growth of at least one zinc-oxide nanostructure is induced substantially over the patterned seed layer by, for example, exposing the patterned seed layer to zinc vapor in the presence of a trace amount of oxygen. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of a zinc thin film layer formed on the substrate.

REFERENCES:
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Article entitled, “Room-Temperature Ultraviolet Nanowire Nanolasers”, by M. H. Huang et al., published in Science Mag. vol. 292, Jun. 8, 2001, pp. 1897-1899.
Article entitled, “Controlled Growth of ZnO Nanowires and Their Optical Properties”, by P. Yang et al., published in Adv. Funct. Mater. 2002, 12, No. 5, May, pp. 323-331.

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