Selective growth of InP in device fabrication

Details Selective growth of InP in device fabrication Selective growth of InP in device fabrication

1991-02-27

1992-10-06

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 88, 437108, 148DIG65, 156610, 156613, 156614, 156DIG70, H01L 736

Patent

active

051531470

ABSTRACT:
Selective epitaxy for indium phosphide in metalorganic chemical vapor deposition is possible by using a specific technique. In particular, a halogenated organic material is introduced with the InP precursors. This halogen-containing material should decompose to release halogen at approximately the same temperature that the metalorganic indium precursor decomposes. Through this process the manufacture of InP-based lasers is significantly enhanced and allows the use of reactive ion etching to form structures upon which InP regrowth is desired.

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Abstract "Selective Area Epitaxy on InP Substrates: A Comparison of Growth Behaviour at Low and Atmospheric Pressure", D. Robein et al., IV European Workshop of MOVPE, Nijmeyen, The Netherlands, Jun. 1991.
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