Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-04-07
2008-07-22
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S102000, C257SE33054, C257SE33061
Reexamination Certificate
active
07402840
ABSTRACT:
A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
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Krames Michael R.
Mueller Gerd O.
Mueller-Mach Regina B.
Ho Tu-Tu V
Leiterman Rachel V.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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