Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-04-11
2006-04-11
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S098000, C313S503000, C313S491000, C356S300000
Reexamination Certificate
active
07026663
ABSTRACT:
A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
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European Search Report, 3 pages.
Krames Michael R.
Mueller Gerd O.
Mueller-Mach Regina B.
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Patent Law Group LLP
Tran Mai-Huong
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