Selective etching processes of SiO 2 , Ti and In 2 O 3...

Details Selective etching processes of SiO 2 , Ti and In 2 O 3... Selective etching processes of SiO 2 , Ti and In 2 O 3...

2008-04-29

2008-04-29

Culbert, Roberts (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

C216S067000

Reexamination Certificate

active

07364665

ABSTRACT:
A method of selectively etching a three-layer structure consisting of SiO2, In2O3, and titanium, includes etching the SiO2, stopping at the titanium layer, using C3F8in a range of between about 10 sccm to 30 sccm; argon in a range of between about 20 sccm to 40 sccm, using an RF source in a range of between about 1000 watts to 3000 watts and an RF bias in a range of between about 400 watts to 800 watts at a pressure in a range of between about 2 mtorr to 6 mtorr; and etching the titanium, stopping at the In2O3layer, using BCl in a range of between about 10 sccm to 50 sccm; chlorine in a range of between about 40 sccm to 80 sccm, a Tcpin a range of between about 200 watts to 500 watts at an RF bias in a range of between about 100 watts to 200 watts at a pressure in a range of between about 4 mtorr to 8 mtorr.

REFERENCES:
patent: 6265318 (2001-07-01), Hwang et al.
patent: 6635498 (2003-10-01), Summerfelt et al.
patent: 2005/0045590 (2005-03-01), Hall et al.
patent: 2005/0070114 (2005-03-01), Li et al.
U.S. Appl. No. 10/659,547, filed Sep. 3, 2003, Hsu et al.

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