Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2006-12-19
2006-12-19
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257S067000, C257S072000, C257S079000
Reexamination Certificate
active
07151277
ABSTRACT:
A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.
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Gao Di
Howe Roger T.
Maboudian Roya
Graybill David E.
Kusha Babak
The Regents of the University of California
Townsend and Townsend / and Crew LLP
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