Selective etching of a protective layer to form a catalyst...

Details Selective etching of a protective layer to form a catalyst... Selective etching of a protective layer to form a catalyst...

2006-01-10

2006-01-10

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Electron emitter manufacture

C438S706000, C438S710000, C438S712000, C438S720000, C438S745000, C438S750000

Reexamination Certificate

active

06984535

ABSTRACT:
An electron-emitting device including a protective layer that is formed on a catalyst layer to protect the catalyst layer from the deleterious environmental conditions before or during a cathode process. The present invention further includes a half etching process that is adapted to partially remove portions of the protective layer from the catalyst layer to etch the catalyst layer except carbon nano-tube growing portions. Portions of the protective layer still remain on the catalyst layer to protect the catalyst layer from the deleterious conditions from next cathode formation process.

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Search Report PCT/US03/40794.

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