Selective etching method for III-V group semiconductor material

Details Selective etching method for III-V group semiconductor material Selective etching method for III-V group semiconductor material

1993-10-14

1995-02-14

Fourson, George

Fishing, trapping, and vermin destroying

437 5, 437 96, 437912, 156646, H01L 2144, H01L 2148

Patent

active

053895746

ABSTRACT:
A selective etching method by etching a III-IV group compound semiconductor which is substantially free from Al and which is disposed adjacent to a III-IV group compound semiconductor containing Al, using a mixed gas at least containing a gas containing C and F as constituent gases and a gas containing Si and Cl as constituent gases.

REFERENCES:
patent: 4734152 (1988-03-01), Geis et al.
patent: 4742026 (1988-05-01), Vatus et al.
patent: 4830705 (1989-05-01), Loewenstein et al.
patent: 4889831 (1989-12-01), Ishii et al.
patent: 5073508 (1991-12-01), Villalon
Dry Etching for Fabrication of Integrated Circuits in III-V Compound Semiconductors Cooper III et al, Semicon/West, San Mateo, Calif., May 1987.

Affiliated with

Also associated with

Rating

Selective etching method for III-V group semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective etching method for III-V group semiconductor material , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective etching method for III-V group semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-287735