Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1996-10-07
1998-11-10
Dutton, Brian
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 41, H01L 2100
Patent
active
058343300
ABSTRACT:
A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.
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Baude Paul F.
Haase Michael A.
Miller Thomas J.
Champlin Judson K.
Dahl Philip Y.
Dutton Brian
Minnesota Mining and Manufacturing Company
Sherman Lorraine R.
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