Selective etch for II-VI semiconductors

Details Selective etch for II-VI semiconductors Selective etch for II-VI semiconductors

1997-09-09

2000-05-02

Bovernick, Rodney

Coherent light generators

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Semiconductor

372 45, H01S 319

Patent

active

060581239

ABSTRACT:
A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

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