Selective etch for GaAs-containing group III-V compounds

Details Selective etch for GaAs-containing group III-V compounds Selective etch for GaAs-containing group III-V compounds

1990-11-30

1992-05-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437234, 148DIG51, H01L 21302

Patent

active

051107651

ABSTRACT:
A solution of H.sub.2 O.sub.2 and EDTA selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. Illustratively, Al.sub.y Ga.sub.1-y As (y.ltoreq.0) is selectively etched in the presence of Al.sub.x Ga.sub.1-x As(x>y), and InGaAs is selectively etched in the presence of either InAlAs or InP.

REFERENCES:
patent: 4049488 (1977-09-01), Tijburg
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Tijburg et al., "New Technological Aspects . . . Gallium Arsenide Structure", Proc. Electrochem. Soc., 88-23, 1987, pp. 657-665.
Welcher, "The Analytical Use of Ethylenediamine Tetracetic Acid", 1958, pp. 1-9.
J. J. Kelly et al., Applied Surface Science, vol. 29, (1987), pp. 149-164) North-Holland, Amsterdam,"A Study of GaAs Etching in Alkaline H.sub.2 O.sub.2 Solutions".
Y. G. Chai et al., IEEE Electron Device Letters, vol. EDL-4, No. 7, Jul. 1983 (pp. 252-254); "In.sub.0.53 Ga.sub.0.74 As Submicrometer FETs Grown by MBE".
P. O'Connor et al., "In.sub.0.53 Ga.sub.0.47 As FET's with Insulator-Assisted Schottky Gates", IEEE Electron Device Letters, vol. EDL-3, Mar. 1982, pp. 64-66.
C. Juang et al., "Selective etching of GaAs and Al.sub.0.30 GA.sub.0.70 As with citric acid/hydrogen peroxide solutions", J. Vacuum Science Technology, B8 (5) Sep./Oct. 1990, pp. 1122-1124.
R. K. Day, Jr. et al., Quantitative Analysis, p. 186, 1967, 2d.ed.

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