Selective erase method for flash memory

Details Selective erase method for flash memory Selective erase method for flash memory

2007-06-12

2007-06-12

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S185300, C365S185180

Reexamination Certificate

active

10960542

ABSTRACT:
Selective erase method for a flash memory device including a group of memory cells arranged in rows and columns include performing an erase operation on the group of memory cells and verifying the erase operation on the group of memory cells to determine threshold voltages of the memory cells. At least one row of memory cells including memory cells having a threshold voltage lower than a desired erase threshold voltage is identified. A further erase operation is performed on the group of memory cells excluding memory cells of the at least one row of memory cells including memory cells having a threshold voltage lower than a desired erase threshold voltage.

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Notice to Submit a Response for Korean Patent Apllication No. 10-2004-0056902 mailed on Mar. 7, 2006.

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