Selective epitaxy of silicon in silicon dioxide apertures with s

Details Selective epitaxy of silicon in silicon dioxide apertures with s Selective epitaxy of silicon in silicon dioxide apertures with s

1991-05-23

1993-05-18

Silczewski, Mary

Fishing, trapping, and vermin destroying

437 93, 437106, 156612, H01L 2120, H01L 21205

Patent

active

052121127

ABSTRACT:
In the prior art, selective epitaxial growth (SEG) of semiconductors, performed typically in rectangular windows penetrating through a masking layer located on a major surface of semiconductor substrate, suffers from unwanted facet formation at the corners of the windows--whereby the desirable planar area available for transistor fabrication is reduced. Such facet formation is suppressed--i.e., the area occupied by unwanted facets is reduced--by adding a relatively small lobe penetrating through the masking layer at each corner of each window prior to performing the SEG, whereby transistor packing density can be increased.

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Sugawara, "Facets Formed by Hydrogen Chloride Vapor Etching on Silicon Surfaces Through Windows in SiO.sub.2 and Si.sub.3 N.sub.4 Masks," J. Electrochem Soc., vol. 118, No. 1, Jan. 1971, pp. 111-114.
Ishitani, A. et al, "Facet Formation in Selective Silicon Epitaxial Growth," Japanese Journal of Applied Physics, vol. 24, No. 10, Oct., 1985, pp. 1267-1269.

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