Selective epitaxy method using laser annealing for making filame

Details Selective epitaxy method using laser annealing for making filame Selective epitaxy method using laser annealing for making filame

1980-01-14

1981-05-26

Dean, R.

Metal treatment

Compositions

Heat treating

148187, 357 91, 427 531, H01L 21263, H01L 736

Patent

active

042696313

ABSTRACT:
A method for making a filamentary pedestal transistor is disclosed in which epitaxial silicon is formed selectively above portions of a subcollector through the use of laser radiation. A single crystal substrate, having a subcollector of higher impurity concentration, is covered by an oxide mask which is apertured at two locations above the subcollector. Polycrystalline silicon is deposited over the apertured oxide mask. The structure is exposed to laser radiation of suitable energy level and wavelength to selectively convert the polycrystalline silicon to epitaxial monocrystalline silicon within and above the oxide apertures. The transistor is completed by conventional techniques to form base, emitter and collector reach-through regions.

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