Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-10-01
1981-02-24
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29578, 29580, 148174, 357 20, 357 34, 357 50, 357 59, 357 88, 357 89, 427 86, H01L 2120, H01L 21302
Patent
active
042525810
ABSTRACT:
A method for making a bipolar filamentary pedestal transistor having reduced base-collector capacitance attributable to the elimination of the extrinsic base-collector junction. Silicon is deposited upon a coplanar oxide-silicon surface in which only the top silicon surface of the buried collector pedestal is exposed through the oxide. Epitaxial silicon deposits only over the exposed pedestal surface while polycrystalline silicon deposits over the oxide surface. The polycrystalline silicon is etched away except in the base region. An emitter is formed in the base region and contacts are made to the emitter, base and collector regions.
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Anantha Narasipur G.
Cavaliere Joseph R.
Konian Richard R.
Srinivasan Gurumakonda R.
Stoller Herbert I.
Dean R.
Haase Robert J.
International Business Machines - Corporation
Saba W. G.
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