Selective epitaxy by beam energy and devices thereon

Details Selective epitaxy by beam energy and devices thereon Selective epitaxy by beam energy and devices thereon

1981-03-25

1983-04-26

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 91, 427 531, H01L 21263, H01L 21265

Patent

active

043812023

ABSTRACT:
A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.

REFERENCES:
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patent: 4101350 (1978-07-01), Possley
patent: 4187126 (1980-05-01), Radd et al.
patent: 4229232 (1980-10-01), Kirkpatrick
patent: 4240843 (1980-12-01), Celler et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4292091 (1981-09-01), Togei
Celler et al., Appl. Phys. Letts., 32 (1978) 464.
Anantha et al., IBM-TDB, 22 (1979) 575.
Lau et al., Appl. Phys. Letts. 33 (1978) 130.
Kamins et al., IEEE-Trans. Electron Devices, ED-27 (Jan. 1980) 299.

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