Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-07-01
1995-05-30
Wojciehowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257554, 257571, 257588, 257592, 257754, H01L 2972
Patent
active
054204542
ABSTRACT:
In a bipolar device, selective epitaxial silicon provides an improved intrinsic-extrinsic base link. A trench physically separates an intrinsic and extrinsic base portion. The trench includes sidewalls having a thin oxide layer formed thereon. The bottom of the trench is exposed during processing. A shallow link between the intrinsic-extrinsic regions of a bipolar transistor base is formed by depositing a heavily boron doped layer of silicon on the exposed portion of the trench. During subsequent processing, including rapid thermal anneal, there is some boron out-diffusion which forms a shallow diffused intrinsic-extrinsic base link.
REFERENCES:
patent: 5096844 (1992-03-01), Konig et al.
patent: 5235206 (1993-08-01), Desilets et al.
S. Chiang, D. Pettengill, P. Vande Voorde, Bipolar Device Design for Circuit Performance Optimization, IEEE 1990 Bipolar Circuits and Technology Meeting (1990).
W. Huang, C. Drowley, P. Vande Voorde, D. Pettengill, J. Turner, A. Kapoor, C. Lin, G. Burton, S. Rosner, K. Brigham, H. Fu, S. Oh, M. Scott, S. Chaing, A. Wang, A High-Speed Bipolar Technolgy Featuring Self-Aligned Single-Poly Base and Submicrometer Emitter Contacts, IEEE Electron Device Letters, vol. 11, No. 9 (Sep. 1990).
J. Hayden, J. Burnett, J. Pfiester, M. Woo, An Ultra-Shallow Link Base for a Double Polysilicon Bipolar Transistor, IEEE 1990 Bipolar Circuits and Technology Meeting (1992).
Vook Dietrich W.
Wang Hsin H.
LandOfFree
Selective epitaxial silicon for intrinsic-extrinsic base link does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective epitaxial silicon for intrinsic-extrinsic base link, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective epitaxial silicon for intrinsic-extrinsic base link will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-364473