Selective epitaxial silicon for intrinsic-extrinsic base link

Details Selective epitaxial silicon for intrinsic-extrinsic base link Selective epitaxial silicon for intrinsic-extrinsic base link

1994-07-01

1995-05-30

Wojciehowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257554, 257571, 257588, 257592, 257754, H01L 2972

Patent

active

054204542

ABSTRACT:
In a bipolar device, selective epitaxial silicon provides an improved intrinsic-extrinsic base link. A trench physically separates an intrinsic and extrinsic base portion. The trench includes sidewalls having a thin oxide layer formed thereon. The bottom of the trench is exposed during processing. A shallow link between the intrinsic-extrinsic regions of a bipolar transistor base is formed by depositing a heavily boron doped layer of silicon on the exposed portion of the trench. During subsequent processing, including rapid thermal anneal, there is some boron out-diffusion which forms a shallow diffused intrinsic-extrinsic base link.

REFERENCES:
patent: 5096844 (1992-03-01), Konig et al.
patent: 5235206 (1993-08-01), Desilets et al.
S. Chiang, D. Pettengill, P. Vande Voorde, Bipolar Device Design for Circuit Performance Optimization, IEEE 1990 Bipolar Circuits and Technology Meeting (1990).
W. Huang, C. Drowley, P. Vande Voorde, D. Pettengill, J. Turner, A. Kapoor, C. Lin, G. Burton, S. Rosner, K. Brigham, H. Fu, S. Oh, M. Scott, S. Chaing, A. Wang, A High-Speed Bipolar Technolgy Featuring Self-Aligned Single-Poly Base and Submicrometer Emitter Contacts, IEEE Electron Device Letters, vol. 11, No. 9 (Sep. 1990).
J. Hayden, J. Burnett, J. Pfiester, M. Woo, An Ultra-Shallow Link Base for a Double Polysilicon Bipolar Transistor, IEEE 1990 Bipolar Circuits and Technology Meeting (1992).

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