Selective epitaxial growth structure and isolation

Details Selective epitaxial growth structure and isolation Selective epitaxial growth structure and isolation

1985-10-31

1988-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437 31, 437 33, 156647, H01L 2122, H01L 2120

Patent

active

047286245

ABSTRACT:
A novel method of employing selective epitaxial growth, in which interdevice isolation is intrinsically formed. Problems stemming from formation of all active device elements within selective epitaxial growth regions are addressed. Additionally, there is shown a novel transistor array formed according to the method of the invention.

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patent: 3865649 (1975-02-01), Beasam
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Nakamura, T. et al., "Self Aligned Transistor with Sidewall Base Electrode" IEEE Transactions on Electron Devices, vol. ED-29, #4, Apr. 1982, pp. 596-600.
Dumke, W. "Bipolar Isolation Technique" IBM Technical Disclosure Bull., vol. 22, #7, Dec. 1979, pp. 2946-2947.

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