Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Semiconductor device or thin film electric solid-state...
Patent
1993-10-05
1997-07-22
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Semiconductor device or thin film electric solid-state...
505473, 505474, 505410, 505413, 505728, 505729, 505238, 427 62, 427 63, H01L 3924
Patent
active
056503776
ABSTRACT:
Fine epitaxial patterns of yttrium barium copper oxide on a strontium titanate substrate are provided by using a silicon nitride mask to define the pattern to be formed. A thin film of yttrium barium copper oxide is placed on the silicon nitride mask and exposed portions of strontium titanate substrate. Where the yttrium barium copper oxide is in contact with the silicon nitride mask, it is nonepitaxial in crystal structure. Where the yttrium barium copper oxide contacts the strontium titanate substrate in the openings, it is epitaxial in structure forming fine patterns that become superconducting below the critical transition temperature. A channel can be formed in the strontium titanate substrate. The epitaxial yttrium barium copper oxide pattern is formed in this channel to minimize possible exposure to the silicon nitride mask.
REFERENCES:
patent: 3615929 (1971-10-01), Waters et al.
patent: 3850707 (1974-11-01), Bestland
patent: 4412868 (1983-11-01), Brown et al.
patent: 4826784 (1989-05-01), Salerno et al.
patent: 4900709 (1990-02-01), Heijman et al.
patent: 4933318 (1990-06-01), Heijman
patent: 5104848 (1992-04-01), Miedema et al.
A. Inoue et al. Japanese Journal of Applied Physics, vol. 26, pp. L1443-L1444 (Sep. 1987).
H. Nakane et al. Japanese Journal of Applied Physics, vol. 26, pp. L1925-L1926 (Nov. 1987).
H. Tanabe et al. Japanese Journal of Applied Physics, vol. 26, pp. L1961-L1963 (Dec. 1987).
P. F. Miceli et al., in Thin Film Processing and Characterization of High-Temperature Superconductors, (American Vacuum Society, 1988), pp. 150-158.
R. L. Burton et al., in Thin Film Processing and Characterization of High-Temperature Superconductors, (American Vacuum Society, 1988) pp. 166-173.
A. M. DeSantolo et al., in Thin Film Processing and Characterization of High-Temperature Superconductors, (American Vacuum Society, 1988), pp. 174-181.
A Mogro-Campero, "A review of high-temperature superconducting films on silicon", Supercond. Sci. Technol. 3 (1990) pp. 155-158.
Simon "Substrate for HTS films" SPIE vol. 1187 Processing of Films for high Tc Superconducting Electronics (1989) p. 2-p. 11.
Ma et al, "Novel method of patterning YBaCuO superconducting thin films," Appl. Phys. lett. 55(9) Aug. 1989 pp. 896-898.
Kern Dieter Paul
Laibowitz Robert Benjamin
Lee Kim Yang
Lutwyche Mark I.
International Business Machines - Corporation
King Roy V.
Morris Daniel P.
LandOfFree
Selective epitaxial growth of high-T.sub.C superconductive mater does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective epitaxial growth of high-T.sub.C superconductive mater, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective epitaxial growth of high-T.sub.C superconductive mater will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1559959