Selective epitaxial growth of gallium arsenide with selective or

Details Selective epitaxial growth of gallium arsenide with selective or Selective epitaxial growth of gallium arsenide with selective or

1983-08-15

1984-08-28

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29578, 29580, 29591, 148175, 156612, 156647, 156648, 156653, 156657, 1566591, 427 84, 357 15, 357 59, 357 50, 357 56, H01L 2120, H01L 21302, H01L 2176

Patent

active

044675216

ABSTRACT:
A method of fabricating semiconductor devices on semi-insulating GaAs substrates is provided. Pre-etched holes in the substrate are covered with a dielectric which is etched to expose the substrate only at the bottom of the holes. Epitaxial growth of active GaAs in the holes may then proceed with a single crystallographic orientation. The dielectric covering the sidewalls of the holes prevents unwanted random growth and poor surface morphology of the active area.

REFERENCES:
patent: 3403439 (1968-10-01), Bailey
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3578515 (1971-05-01), Borrello et al.
patent: 3808470 (1974-04-01), Kniepkamp
patent: 4316201 (1982-02-01), Christou et al.
Shaw, D. W., "Selective Epitaxial Deposition of Gallium Arsenide in Holes", J. Electrochem. Soc., vol. 113, No. 9, Sep. 1966, pp. 904-908.
Yang et al., "Selective Epitaxial Growth of GaAs by Liquid Phase Epitaxy", J. Electrochem. Soc., vol. 129, No. 1, Jan. 1982, pp. 194-197.
Broadie et al., "Selective Planar GaP/Si Deposition . . . Diodes", IBM Tech. Discl. Bull., vol. 16, No. 4, Sep. 1973, p. 1301.
French, W. B., "Technique for Reducing Surface Leakage . . . Devices", RCA Tech. Note No. 919, (2 pages), Oct. 25, 1972.

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