Selective epitaxial etch planar processing for gallium arsenide

Details Selective epitaxial etch planar processing for gallium arsenide Selective epitaxial etch planar processing for gallium arsenide

1982-01-11

1984-01-24

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29580, 148 15, 148175, 156648, 156662, 427 84, 357 15, 357 22, 357 91, H01L 2120, H01L 21302

Patent

active

044267673

ABSTRACT:
A method of fabricating gallium arsenide circuits or devices in which source and drain contact areas are deposited using vapor phase epitaxy techniques through holes in a refractory mask. Selected areas of a refractory mask are etched away to expose a region of active gallium arsenide material in which holes are formed by a chemical or plasma etch. These holes are then filled with highly doped vapor phase epitaxially grown gallium arsenide to provide drain and source contact regions. In further steps additional regions of the refractory mask are etched away to define gate regions. Metallization and lift-off may then occur in a single step to provide contacts to gate, drain and source regions and a planar surface for further device processing.

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Fukuta et al., "Power GaAs Mesfet . . . ". IEEE Trans. on Microwave Theory & Tech. vol. MTT-24, No. 6, Jun. 1976, pp. 312-317.
Suzuki et al., "GaAs Power FET" Fujitsu Sci. & Tech. J. (Japan) vol. 12, No. 2, Jun. 1976, pp. 163-177.
Tietjen et al., "Preparation & Properties . . . Vapor-Deposited GaAs P . . . " J. Electrohem. Soc., vol. 113, No. 7, Jul. 1966, pp. 724-728.

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