Selective enhancement of phosphorus diffusion by implanting halo

Details Selective enhancement of phosphorus diffusion by implanting halo Selective enhancement of phosphorus diffusion by implanting halo

1977-06-29

1979-01-09

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 34, 357 40, 357 91, H01L 21263, H01L 2702

Patent

active

041337018

ABSTRACT:
An improved method of making bipolar monolithic integrated circuits by successive diffusions of boron and phosphorus. Selective halogen ion implantation is used to locally specifically enhance phosphorus diffusion. The halogen implant is performed prior to the boron diffusion. Enhanced local phosphorus diffusion provides selected transistors in the circuit with a narrower base width than others, and a corresponding higher current gain than others. Analogously, higher value pinch resistors can be selectively produced in the circuit.

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