Selective dry etching method of undoped and doped silicon thin f

Details Selective dry etching method of undoped and doped silicon thin f Selective dry etching method of undoped and doped silicon thin f

1995-09-07

1998-07-21

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, H01L 21302

Patent

active

057834946

ABSTRACT:
In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

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Haller et al., Journal of the Electrochemical Society, No. 8, "Selective Wet and Dry Etching of Hydrogenated Amorphous Silicon and Related Materials", pp. 2042-2045 (1988).
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