Selective doping crystal growth method

Details Selective doping crystal growth method Selective doping crystal growth method

1977-03-28

1978-04-25

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 91, 357 20, 156605, H01L 21203, H01L 21363

Patent

active

040861082

ABSTRACT:
Molecular beams of elements constituting a crystal and ion beams prepared by ionizing dopant atoms and/or dopant molecules are simultaneously and uniformly directed to a surface of a substrate and a region of the surface which is not required to be doped is simultaneously irradiated with electron beams. The ion beams directed to the regions not to be doped are coupled with the electron beam prior to and on arrival at the region and electrically neutralized. Thus, the crystal grows in some regions without the dopant and the crystal also grows in other regions with the dopant.

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G. Dearnaley et al. (Editors), Ion Implantation, North - Holland, London, 1973, pp. 311-317.
J. W. Mayers et al., "Zn and Te Implantations into GaAs., Jour.", Appl. Phys. 38 (1967) 1975.
M. Naganuma et al., "Ionized Zn Doping of GaAs Molecular Beam Epitaxial Films", Appl. Phys. Lett. 27 (1975) 342.

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