Selective disordering of well structures by laser annealing

Details Selective disordering of well structures by laser annealing Selective disordering of well structures by laser annealing

1985-09-13

1987-03-31

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576E, 148175, 148187, 148DIG84, 148DIG94, 357 61, 357 91, H01L 21265, H01L 21203

Patent

active

046540903

ABSTRACT:
A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer. The method comprises the steps of (1) either placing the structure within a protective environment to prevent the escape of volatile components from the structure during subsequent processing or alternatively, covering the structure with a protective coating to prevent the escape of any elemental component of the structure, (2) heating the structure to a background temperature just below the temperature required to achieve rapid thermal disordering of the well feature, (3) scanning the structure with a laser beam while maintaining the applied heat to selectively disorder the well feature due to the additional heat supplied by the laser beam forming a pattern of wider bandgap and lower refractive index properties prescribed in the feature by the scanning trace of the laser beam compared to areas of the feature not scanned by the laser beam. The well feature may be a quantum well structure comprising a single quantum well structure, a multiple quantum well structure or a separate confinement single quantum well or a separate confinement multiple quantum well or a heterostructure including an active region being the first layer.

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