Selective deposition process of a refractory metal silicide onto

Details Selective deposition process of a refractory metal silicide onto Selective deposition process of a refractory metal silicide onto

1988-11-08

1989-10-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 148DIG147, 4271261, H01L 2144, C23C 1642

Patent

active

048716910

ABSTRACT:
A selective deposition process of a refractory metal silicide onto the silicon apparent surfaces of a wafer partially coated with SiO.sub.2, comprising the following steps: flowing in a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a partial pressure P.sub.Si.sbsb.x.sub.H.sbsb.y and an halogenide of said metal at a partial pressure P.sub.Me ; heating the wafer to a first temperature (T1) for a first duration (t1), P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, the silicon being overstoichiometric; and, heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me so as to allow a stoichiometric metal silicide deposition to be formed on the wafer.

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patent: 4668530 (1987-05-01), Reif et al.
Tedrow et al., "Low Pressure Chemical Vapor Deposition of Titanium Silicide", Appl. Phys. Lett., vol. 46, No. 2, pp. 189-191.
Hara et al., "Deposition and Properties of Plasma-Enhanced CVD Titanium Silicide", Proc.-Electrochem. Soc. 87-8, (Proc. Int. Conf. Chem. Vapor Deposition, 10th, 1987), pp. 867-876.
Million-Brodaz et al., "Thermodynamic and Experimental Studies of the APCVD of Titanium Disilicide", Vide, Couches Minces, vol. 42, No. 236, pp. 191-194.
Ilderem et al., "Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposite Titanium Silicide", J. Electrochem. Soc., vol. 135, No. 10, pp. 2590-2596.
Ilderem et al., "Very Low Pressure Chemical Vapor Deposition Process for Selective Titanium Silicide Films", App. Phys. Lett., vol. 53, No. 8, pp. 687-689.

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