Selective deposition of tungsten on TiSi.sub.2

Details Selective deposition of tungsten on TiSi.sub.2 Selective deposition of tungsten on TiSi.sub.2

1990-08-30

1991-06-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437189, 437228, H01L 2144

Patent

active

050232010

ABSTRACT:
An improved process for preparing selective deposition of conductive metals on disilicide encroachment barriers allows the construction of integrated circuit components wherein the metal/disilicide interface is substantially free of O and/or F contamination. The level of interfacial oxygen and/or fluorine contamination in the selective W deposition on the TiSi.sub.2 was substantially reduced or eliminated by first forming a C49 TiSi.sub.2 phase on a substrate, selectively depositing W on the C49 TiSi.sub.2 phase and thereafter annealing at a (minimum) temperature sufficient to convert the high resistivity phase C49 TiSi.sub.2 to the low resistivity phase C54 TiSi.sub.2.

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