Selective deposition of metal on metal nitride to form interconn

Details Selective deposition of metal on metal nitride to form interconn Selective deposition of metal on metal nitride to form interconn

1992-08-24

1993-02-16

Quach, T. N.

Fishing, trapping, and vermin destroying

437200, 437246, H01L 21443

Patent

active

051871203

ABSTRACT:
A method for forming an aperture in a semiconductor oxide layer to form an electrical interconnect (via or contact) for a multi-layer semiconductor circuit. This method allows preferential deposit of tungsten in the aperture but resists deposit of tungsten on the oxide exposed surface. Before the tungsten is deposited, a layer of a first phase of titanium nitride (or tungsten nitride), which promotes nucleation of tungsten thereon, is formed within the aperture; and an overlayer of a second phase of titanium nitride (or tungsten nitride), which resists nucleation of tungsten thereon, is formed on the oxide exposed surface. The tungsten is then deposited preferentially on the titanium nitride (or tungsten nitride) layer within the aperture, but not on the titanium nitride (or tungsten nitride) overlayer on the oxide layer. The overlayer of titanium nitride (or tungsten nitride) and part of all of the oxide layer may be removed to expose an electrical contact. The titanium nitride and titanium silicide may be replaced by a metal nitride MN and a metal silicide MSi.sub.X (1<x<2), where M is one of the metals Zr, Hf, V, Nb, Ta, Cr and Mo.

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