Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-05-28
1994-08-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 65, 257382, 257742, 257755, H01L 2348
Patent
active
053369033
ABSTRACT:
Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substrate. The doped silicon-germanium alloy acts as a diffusion source for the dopant, so that shallow doped, regions may be formed at the face of the semiconductor substrate without ion implantation. A high performance contact to the doped region is also provided by forming a metal layer on the doped silicon-germanium alloy layer and heating to react at least part of the silicon-germanium alloy layer with at least part of the metal layer to form a layer of germanosilicide alloy over the doped regions. The method of the present invention is particularly suitable for forming shallow source and drain regions for a field effect transistor, and self-aligned source and drain contacts therefor.
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Ashburn Stanton P.
Grider Douglas T.
Ozturk Mehmet C.
Sanganeria Mahesh K.
Wortman Jimmie J.
Mintel William
North Carolina State University at Raleigh
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