Selective deposition of amorphous silicon film seeded in a chlor

Details Selective deposition of amorphous silicon film seeded in a chlor Selective deposition of amorphous silicon film seeded in a chlor

1997-08-20

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438396, H01L 2120

Patent

active

06146967&

ABSTRACT:
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.

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