Selective deposition of amorphous and polycrystalline silicon

Details Selective deposition of amorphous and polycrystalline silicon Selective deposition of amorphous and polycrystalline silicon

1989-04-24

1990-10-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG25, 148DIG26, 148DIG122, 148DIG167, 4272481, 437 89, 437108, 437112, 437233, 437946, H01L 2120

Patent

active

049635069

ABSTRACT:
A method for selectively depositing amorphous or polycrystalline silicon wherein a wafer having exposed silicon regions thereon is placed into a CVD reactor and subjected to a silicon containing gas and a halogen containing gas, at least one of which flows into the reactor with a hydrogen carrier gas. Amorphous silicon may be selectively deposited in the range of approximately 200 to 550 degrees centigrade while polycrystalline silicon may be selectively deposited in the range of approximately 550 to 750 degrees centigrade. It is also possible to deposit polycrystalline silicon at temperatures in the range of approximately 750 to 1000 degrees centigrade by employing another embodiment of the present invention.

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Mieno et al., "Selective Doped Polysilicon Growth", J. Electrochem. Soc., vol. 134, No. 11, Nov. 1987, pp. 2862-2867.

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