Selective crystal growth method of compound semiconductor

Details Selective crystal growth method of compound semiconductor Selective crystal growth method of compound semiconductor

1995-04-04

1998-01-06

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117105, C30B 2502

Patent

active

057049750

ABSTRACT:
Disclosed herein is a selective metalorganic vapor phase growth method of a group III-V compound semiconductor containing at least Al and In, in which a ratio of an HCl gas supply amount to a supply amount of a group III set in a range of 0.01-0.3. Hence, a polycrystal density is decreased to ensure a selectivity, and a grown crystal composition can be controlled so as not to be excessive in the Al composition so that composition control can be done easily.

REFERENCES:
"Selective Epitaxial Growth of In.sub.1-x Al.sub.x As by Metal-Organic Vapour-Phase Epitaxy," K. Shimoyama et al., Materials Science and Engineering, vol. B17, No. 1-3, 1993, pp. 29-33.
"DFB-LD/Modulator Integrated Light Source by Bandgap Energy Controlled Selective MOVPE," T. Kato et al., Electronics Letters, vol. 28, No. 2, Jan. 16, 1992, pp. 153 and 154.
"Novel Selective Area Growth of AlGaAs and AlAs With HCl Gas by MOVPE," K. Shimoyama et al., Journal of Crystal Growth, 124, 1992, pp. 235-242.

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