Selective chemical vapor deposition of tungsten for microdynamic

Details Selective chemical vapor deposition of tungsten for microdynamic Selective chemical vapor deposition of tungsten for microdynamic

1991-09-19

1992-09-22

Quach, T. N.

Fishing, trapping, and vermin destroying

437 24, 437182, 437195, 437245, 437203, H01L 21283

Patent

active

051496739

ABSTRACT:
A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.

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