Selective chemical sensitive FET transducer

Details Selective chemical sensitive FET transducer Selective chemical sensitive FET transducer

1978-11-03

1980-08-19

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

128635, 204195R, 204195P, 204195S, 204195B, 357 25, G01N 2730

Patent

active

042182980

ABSTRACT:
A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.

REFERENCES:
patent: 4020830 (1977-05-01), Johnson et al.
Masayoshi Esashi et al., J. Japan Soc. Appl. Physics, vol. 44, pp. 339-343, (1975).
Stanley D. Moss et al., Anal. Chem., vol. 47, No. 13, pp. 2238-2243, Nov. 1975.
Jiri Jamata et al., Biomedical Engineering, pp. 241-245, Jul. 1976.
Tadayuki Matsuo et al., IEEE Trans. Biomed. Eng., pp. 485-487, Nov. 1974.

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