Selective chemical etch method for MRAM soft layers

Details Selective chemical etch method for MRAM soft layers Selective chemical etch method for MRAM soft layers

2007-08-07

2007-08-07

Hassanzadeh, Parviz (Department: 1763)

Etching a substrate: processes

Forming or treating article containing magnetically...

C216S057000

Reexamination Certificate

active

11147512

ABSTRACT:
An etching process is employed to selectively pattern the exposed magnetic film layer of a magnetic thin film structure. The magnetic structure to be etched includes at least one bottom magnetic film layer and at least one top film layer which are separated by a tunnel barrier. The etching process employs various etching steps that selectively remove various layers of the magnetic thin film structure stopping on the tunnel barrier layer.

REFERENCES:
patent: 6426012 (2002-07-01), O'Sullivan et al.
patent: 6656372 (2003-12-01), Yates
patent: 2006/0289381 (2006-12-01), O'Sullivan et al.

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