Selective chemical etch method for MRAM freelayers

Details Selective chemical etch method for MRAM freelayers Selective chemical etch method for MRAM freelayers

2008-10-03

2011-12-27

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Forming or treating article containing magnetically...

C216S100000, C216S103000, C438S738000, C438S754000

Reexamination Certificate

active

08083955

ABSTRACT:
An etching process is employed to selectively pattern an exposed magnetic layer of a magnetic thin film structure. The etching process generally includes selectively patterning a magnetic film structure comprises providing a magnetic structure comprising at least one bottom magnetic layer, at least one top magnetic layer, wherein the at least one bottom magnetic layer is separated from the at least one top magnetic layer by a tunnel barrier layer; and selectively etching the top magnetic layer with an etching solution comprising at least one weakly absorbing acid, a surfactant inhibitor soluble in the at least one weakly absorbing acid, and at least one cation additive, wherein etching of the tunnel barrier layer is substantially prevented. In some embodiments, etching solution comprises at least one perfluoroalkane sulfonic acid, an alkylsulfonate salt soluble in the at least one perfluoroalkane sulfonic acid, and at least one cation additive.

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International Search Report for International Application No. PCT/EP2009/058240; Mailing Date Sep. 14, 2009.

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