Selective barrier slurry for chemical mechanical polishing

Details Selective barrier slurry for chemical mechanical polishing Selective barrier slurry for chemical mechanical polishing

2011-08-02

2011-08-02

Vinh, Lan (Department: 1713)

Compositions

Etching or brightening compositions

C252S079200, C438S754000

Reexamination Certificate

active

07988878

ABSTRACT:
The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.

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