Selective ball-limiting metallurgy etching processes for...

Details Selective ball-limiting metallurgy etching processes for... Selective ball-limiting metallurgy etching processes for...

2005-07-12

2005-07-12

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S738000

Reexamination Certificate

active

06917106

ABSTRACT:
A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.

REFERENCES:
patent: 6501185 (2002-12-01), Chow et al.
patent: 6569752 (2003-05-01), Homma et al.
patent: 2003/0129822 (2003-07-01), Lee et al.
patent: 2003/0214036 (2003-11-01), Sarihan et al.
patent: 2004/0005771 (2004-01-01), Fan et al.

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