Selective area regrowth for surface-emitting lasers and other sh

Details Selective area regrowth for surface-emitting lasers and other sh Selective area regrowth for surface-emitting lasers and other sh

1990-11-06

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437129, 148DIG95, 148DIG26, 148DIG50, H01L 2120, H01L 21203

Patent

active

051048248

ABSTRACT:
A method of etching and regrowing III-V compounds in a sharply defined vertical feature. Molecular beam epitaxy is used to grow a laterally undefined vertical-cavity, surface-emitting diode laser structure from semiconducting III-V materials. The structure includes interference mirrors defining the end of a Fabry-Perot cavity and a quantum-well layer in the middle of the cavity. A tungsten mask is then defined over the areas of the intended two-dimensional array of lasers. A chemically assisted ion beam etches through to the bottom of the laser structure to from an array of high aspect-ratio pillars. A thermal chlorine gas etch removes a portion of the sidewalls of the pillars without attacking the tungsten, thereby removing ion-beam damage at the sides of the vertical-cavities and creating a lip of the tungsten mask overhanging the pillar sidewall. Organo-metallic chemical vapor deposition is used to regrow III-V material around the pillars. This growth process can quickly planarize the pillars. The tungsten lip prevents the growth from climbing over the top of the pillar. The regrown material may be insulating, or may include conductive portions ot provide laser contact, or may be selected to provide tailored index guiding in the laser device.

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