Selective area nucleation and growth method for metal chemical v

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427124, 427250, 427319, 427320, 2504923, 361380, 361397, 361401, 21912135, B05D 306

Patent

active

049082264

ABSTRACT:
A method for depositing metallic lines on an IC chip or mask is described using a focused ion beam (FIB) with a much lower ion dosage than previously required, on the order of 10.sup.14 -10.sup.15 ions/cm.sup.2. A substrate is scanned with the FIB to produce a series of nucleation sites on the substrate surface. These nucleation sites can be in an adlayer or can be produced by lattice damage or sputtering directly in the substrate material. The substrate is then exposed to a source gas containing the material to be deposited, while heated to a temperature slightly less than the spontaneous thermal decomposition temperature of the source gas. This results in a well-defined line of materials being deposited from the source gas along the line defined by the nucleation sites. The ratio of the spontaneous activation energy to the autocatalytic activation energy for the gases is preferably at least about an order of magnitude, and the FIB is preferably moved in multiple scans across the desired line. In a particular embodiment both the adlayer and source gas comprise iron pentacarbonyl, an ion dosage of 3.times.10.sup.14 ions/cm.sup.2 is used, and the substrate is heated to approximately 130.degree. C. The ion dosage is low enough that the system is compatible with other FIB processes, such as lithography, implantation and sputtering. Applications include the fabrication and repair of both ICs and masks.

REFERENCES:
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4766516 (1988-08-01), Ozdemir et al.
Shedd et al., "Focused Ion Beam Induced Deposition of Gold" Appl. Phys. Lett. 49(23) Dec. 1986, pp. 1584-1586.
Ehrlich et al., "A Review of Laser-Microchemical Processing" J. Vac. Sci. Technol. B1, pp. 969-984 (1983).
Gamo et al., "Ion Beam Assited Deposition of Metal Organic Films Using Focused Ion Beams" Jpn. J. Appl. Phys. Vol. 23, May 1984, pp. 293-295.
Matsui et al., "Ion Species Dependence-of focused-Ion-Beam Lithography" J. Vac. Sci. Technol. B5(4) Jul./Aug. 1987 pp. 853-857.
Matsui et al., "Lithographic Approach for 100 nm Fabrication by Focused Ion Beam" J. Vac. Sci. Technol B4(4) Jul./Aug. 1986, pp. 845-849.
Kaito et al., "Mask Repair Using Focused Ion Beam" Seiko Instruments and Electronics 1985.9.

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