Selective area III-V growth and lift-off using tungsten patterni

Metal working – Method of mechanical manufacture – Assembling or joining

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29576E, 29 58D, 148174, 148175, 148DIG26, 148DIG50, 148DIG105, 148DIG169, 156643, 156652, 156653, 156656, 1566591, 156660, 156612, 156DIG103, 427 90, 427 91, H01L 2120, H01L 21302

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active

046371290

ABSTRACT:
A method of device fabrication using selective area regrowth Group III-V compound semiconductors with tungsten patterning is described.

REFERENCES:
patent: 3306788 (1967-02-01), Sterling et al.
patent: 3634150 (1972-01-01), Horn
patent: 3909319 (1975-09-01), Fujiwara et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4301233 (1981-11-01), Calviello
patent: 4326911 (1982-04-01), Howard et al.
patent: 4404732 (1983-09-01), Andrade
patent: 4426767 (1984-01-01), Swanson et al.
patent: 4448800 (1984-05-01), Ehara et al.
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 4498953 (1985-02-01), Cook et al.
Driver et al., "Gallium Arsenide Self-Aligned Gate Field-Effect Transistor" Proceedings IEEE (Letters) Aug. 1971, pp. 1244-1245.
Jackson et al., "Novel Submicron Fabrication Technique" IEDM, 1979, paper 3.6 (4 pages).
Imamura et al., "Wsi/Tin/Au Gate Self-Aligned---Mocvd" Jap. J. Applied Physics, vol. 23, No. 5, May 1984, pp. L342-L345.
"Dry Development of Se-Ge Inorganic Photoresist", Applied Physics Letters, 36(1), Jan. 1, 1980, A. Yoshikawa et al., pp. 107-109.
"GaAs Planar Technology by Molecular Beam Epitaxy (MBE)", Journal of Applied Physics, vol. 46, No. 2, Feb. 1975, A. Y. Cho et al., pp. 783-785.

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