Selective area III-V growth and lift-off using tungsten patterni

Details Selective area III-V growth and lift-off using tungsten patterni Selective area III-V growth and lift-off using tungsten patterni

1984-07-30

1987-01-20

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29 58D, 148174, 148175, 148DIG26, 148DIG50, 148DIG105, 148DIG169, 156643, 156652, 156653, 156656, 1566591, 156660, 156612, 156DIG103, 427 90, 427 91, H01L 2120, H01L 21302

Patent

active

046371290

ABSTRACT:
A method of device fabrication using selective area regrowth Group III-V compound semiconductors with tungsten patterning is described.

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Imamura et al., "Wsi/Tin/Au Gate Self-Aligned---Mocvd" Jap. J. Applied Physics, vol. 23, No. 5, May 1984, pp. L342-L345.
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