Selective area chemical vapor deposition

Details Selective area chemical vapor deposition Selective area chemical vapor deposition

1989-11-28

1991-02-05

Bueker, Richard

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272481, 118715, 118725, C23C 1600

Patent

active

049903748

ABSTRACT:
A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside growth, and has particular utility in the fabrication by the chemical vapor deposition process of large, lightweight mirrors.

REFERENCES:
patent: 4033286 (1977-07-01), Chern
patent: 4825809 (1989-05-01), Mieno
patent: 4870923 (1989-10-01), Sugimoto

Affiliated with

Also associated with

Rating

Selective area chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective area chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective area chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-9712