Selective anodic oxidation of semiconductors for pattern generat

Details Selective anodic oxidation of semiconductors for pattern generat Selective anodic oxidation of semiconductors for pattern generat

1984-11-01

1986-02-11

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204224R, 204DIG7, C25D 1102, C25D 1700

Patent

active

045697280

ABSTRACT:
Apparatus and method for selectively controlling anodic oxide growth on semiconductors for controlled electrochemical pattern generation incorporating use of a writing beam of a wavelength which encourages oxide growth and a bias beam at a wavelength which discourages oxide growth. The bias beam is projected on the semiconductor in electrolytic environment to prevent or retard oxide growth while oxide growth is accelerated at points of illumination by means of writing beam.

REFERENCES:
patent: 3345274 (1967-10-01), Schmidt
patent: 3890215 (1975-06-01), DiLorenzo et al.
patent: 4133724 (1979-01-01), Hartnagel et al.
patent: 4217183 (1980-08-01), Melcher et al.
patent: 4251327 (1981-02-01), Grenon

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