Selective and non-selective epitaxy for base integration in...

Details Selective and non-selective epitaxy for base integration in... Selective and non-selective epitaxy for base integration in...

2007-11-06

2007-11-06

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S592000, C438S341000

Reexamination Certificate

active

11146537

ABSTRACT:
According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitaxial extension layer extends over the first and second isolation regions. The bipolar transistor further includes a base layer situated on the epitaxial extension layer, where the base layer includes an epitaxial base, and where the epitaxial base includes a usable emitter formation area. The active area has a first width and the usable emitter formation area has a second width, where the second width is at least as large as the first width.

REFERENCES:
patent: 4829016 (1989-05-01), Neudeck
patent: 5834800 (1998-11-01), Jalali-Farahani et al.
patent: 5861640 (1999-01-01), Gomi
The American Heritage Dictionary, Second College Edition (1982), p. 867.

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