Selective and blanket chemical vapor deposition of Cu from (.bet

Details Selective and blanket chemical vapor deposition of Cu from (.bet Selective and blanket chemical vapor deposition of Cu from (.bet

1992-11-24

1994-10-25

Beck, Shrive

Coating processes

Nonuniform coating

Mask or stencil utilized

427250, 4272551, 427300, C23C 1404

Patent

active

053587430

ABSTRACT:
In microelectronic manufacture, vertical interconnects in integrated circuits are made by the selective deposition of copper onto SiO.sub.2, which is controlled by reacting the SiO.sub.2 surface with chlorotrimethylsilane or dimethyldichlorosilane. These silanes interact with the surface hydroxyl groups to reduce the number of sites at which (hfac)Cu(VTMS) can adsorb and react, therefore providing selectivity.

REFERENCES:
patent: 5098516 (1992-03-01), Norman et al.
patent: 5100501 (1992-03-01), Blumenthal et al.

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