Selection of crystal orientation in diamond film chemical vapor

Details Selection of crystal orientation in diamond film chemical vapor Selection of crystal orientation in diamond film chemical vapor

1997-07-14

1999-04-06

Jordan, Charles T.

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

C23C 1600

Patent

active

H00017922

ABSTRACT:
In depositing an adhering, continuous, polycrystalline diamond film on a substrate by forming a refractory nitride interlayer on the substrate and depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, the crystal orientation of the deposited diamond, <111> or <100>, is selected by controlling the pressure in the chamber. Preferably, relatively higher microwave power is utilized at higher pressures.

REFERENCES:
patent: 4985227 (1991-01-01), Ito et al.
Matsumoto, "Chemical Vapor deposition of diamond in RF glow discharge", J. aterial Science Letters 4, 1985, pp. 600-602.

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