Selectable open circuit and anti-fuse element, and...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S467000, C438S600000, C438S630000, C438S770000, C257S530000, C257S209000

Reexamination Certificate

active

07015076

ABSTRACT:
A method is provided of forming an integrated circuit with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a silicide when the semiconductor substrate is reacted to form such a silicide. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A silicide is formed on the source/drain junctions and dopant is segregated to the top surface of the silicide. The dopant on the top surface of the segregated dopant is oxidized to form an insulating layer of oxidized dopant above the silicide. An interlayer dielectric is deposited above the semiconductor substrate. Contacts and connection points are then formed in the interlayer dielectric to the insulating layer of oxidized dopant above the silicide.

REFERENCES:
patent: 4569121 (1986-02-01), Lim et al.
patent: 4670970 (1987-06-01), Bajor
patent: 5329153 (1994-07-01), Dixit
patent: 6051851 (2000-04-01), Ohmi et al.
patent: 6063704 (2000-05-01), Demirlioglu
patent: 6211083 (2001-04-01), Yang et al.
patent: 6339021 (2002-01-01), Tan et al.
patent: 6518614 (2003-02-01), Breitwisch et al.
patent: 6673715 (2004-01-01), Trivedi et al.
patent: 6853049 (2005-02-01), Herner

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Selectable open circuit and anti-fuse element, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selectable open circuit and anti-fuse element, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selectable open circuit and anti-fuse element, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3600908

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.