Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2006-03-21
2006-03-21
Eckert, George (Department: 2814)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C438S467000, C438S600000, C438S630000, C438S770000, C257S530000, C257S209000
Reexamination Certificate
active
07015076
ABSTRACT:
A method is provided of forming an integrated circuit with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a silicide when the semiconductor substrate is reacted to form such a silicide. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A silicide is formed on the source/drain junctions and dopant is segregated to the top surface of the silicide. The dopant on the top surface of the segregated dopant is oxidized to form an insulating layer of oxidized dopant above the silicide. An interlayer dielectric is deposited above the semiconductor substrate. Contacts and connection points are then formed in the interlayer dielectric to the insulating layer of oxidized dopant above the silicide.
REFERENCES:
patent: 4569121 (1986-02-01), Lim et al.
patent: 4670970 (1987-06-01), Bajor
patent: 5329153 (1994-07-01), Dixit
patent: 6051851 (2000-04-01), Ohmi et al.
patent: 6063704 (2000-05-01), Demirlioglu
patent: 6211083 (2001-04-01), Yang et al.
patent: 6339021 (2002-01-01), Tan et al.
patent: 6518614 (2003-02-01), Breitwisch et al.
patent: 6673715 (2004-01-01), Trivedi et al.
patent: 6853049 (2005-02-01), Herner
Chan Darin A.
Chan Simon Siu-Sing
King Paul L.
Advanced Micro Devices , Inc.
Eckert George
Hafiz Mursalin B.
Ishimaru Mikio
LandOfFree
Selectable open circuit and anti-fuse element, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selectable open circuit and anti-fuse element, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selectable open circuit and anti-fuse element, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3600908