Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-04-18
2006-04-18
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S535000
Reexamination Certificate
active
07030460
ABSTRACT:
A user-selectable integrated circuit capacitance apparatus may include first and second electrodes defining a first fractal geometry, along with second and third electrodes defining a second fractal geometry. A dielectric may be located adjacent to the first and third electrodes. A method of fabricating the apparatus may include selecting a dielectric layer, forming the first and second electrodes so as to define the first fractal geometry on the dielectric layer, and then forming third and fourth electrodes so as to define a second fractal geometry on the dielectric layer. A circuit package may include external package connections connected to the electrodes of the apparatus. A system may include the apparatus coupled to a wireless transceiver by way of a power supply trace.
REFERENCES:
patent: 6084285 (2000-07-01), Shahani et al.
Samavati et al., Fractal Capacitors, Dec. 1998, IEEE Journal of Solid-state Circuits, V 12, pp 2035-2041.
Chu Peir
Greenwood Mike
Liu Tao
Schiveley Steve
Steyskal Aaron J.
Intel Corporation
Pham Hoai
Schwegman Lundberg Woessner & Kluth P.A.
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