Select gate enhanced high density read-only-memory device

Details Select gate enhanced high density read-only-memory device Select gate enhanced high density read-only-memory device

1996-09-13

1998-07-07

Nelms, David C.

Static information storage and retrieval

Read only systems

Semiconductive

365 51, 365 63, G11C 1700

Patent

active

057779198

ABSTRACT:
The present invention is related to an enhanced high density Read-Only-Memory (ROM) device with select gate. A thin oxide layer is deposited on the ROM cell matrix and it is extended to the select lines which is on the top and bottom side of the ROM cell matrix to form the select gate. The ROM cell matrix can be organized more flexible by using the buried layers to pick out the unwanted gates. The metal contact can be directly made in this extended region too. Thereafter it reduces the manufacturing cost and achieves a high speed and density and simple process device.

REFERENCES:
patent: 5268861 (1993-12-01), Hotta

Affiliated with

Also associated with

Rating

Select gate enhanced high density read-only-memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Select gate enhanced high density read-only-memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Select gate enhanced high density read-only-memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1213699