Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1996-09-25
1999-03-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257154, 257173, H01L 2974, H01L 31111
Patent
active
058804889
ABSTRACT:
A segmented SCR ESD protection circuit for discharging an external electrostatic stress on a semiconductor integrated circuit is formed over a semiconductor substrate. The protection circuit includes an SCR device and a number of resistors. The SCR device is separated into a plurality of SCR segments for suppressing the occurrence of the secondary breakdown. Each of the resistors is connected to one of the SCR segments. The resistors can be in the form of parasitic resistances of the SCR device or in the form of additional electronic components formed on the semiconductor substrate.
REFERENCES:
patent: 3662250 (1972-05-01), Piccone et al.
patent: 4231054 (1980-10-01), Ruetsch et al.
patent: 4244000 (1981-01-01), Ueda et al.
patent: 4365170 (1982-12-01), Okuhara
patent: 4939616 (1990-07-01), Rountree
patent: 5012317 (1991-04-01), Rountre
patent: 5670799 (1997-09-01), Croft
Ngo Ngan V.
Windbond Electronics Corp.
LandOfFree
Segmented silicon-control-rectifier (SCR) electrostatic discharg does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Segmented silicon-control-rectifier (SCR) electrostatic discharg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Segmented silicon-control-rectifier (SCR) electrostatic discharg will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1323946